意识知觉中的皮层和丘脑电生理信号。A-C高密度头皮脑电图地形图显示平均电压(微伏;在与事件相关电位(ERPs) N100对应的四个时间窗口(75-125毫秒;ms),视觉意识负性(VAN;175-225 ms)、P2/N2 (275-325 ms)和P3 (350-650 ms)对A报告、B无报告和C报告与无报告数据中感知与未感知刺激的影响。VAN对于报告和无报告数据都存在,而后期的erp,特别是N2和P3是依赖于报告的。D皮层下深度通道位置塌陷到MNI脑模板空间的冠状片上(−19.9 mm)。红色/紫色(N = 13)和白色双极通道(N = 11)分别区分高于或低于电压阈值的通道(图S12)(详细方法和材料详见补充资料)。红色通道为RNS System (NeuroPace, Inc.),紫色通道为Natus NeuroWorks (Natus, Inc.)深度电极记录(表S2)。邻近解剖结构包括侧脑室(LV)、第三脑室(3v)、丘脑(Th)、中脑被盖(MT)和脑桥。 Right cortical hemisphere (R) and left cortical hemisphere (L). E Thalamic awareness potential (TAP) and P3 are seen, respectively in thalamic above-threshold contacts and Pz (location on inset) scalp EEG contacts. Mean timecourses show significant differences for perceived versus not perceived stimuli in the ERP analysis for TAP and P3 by cluster-based permutation tests (*p < 0.05) (Full details on methods and materials are available in the Supplementary Information). Stimulus onset was at time = 0 ms. F Peak latencies from stimulus onset for scalp ERPs and TAP. Circles represent individual data (mean channel latencies) and error bars indicate standard error of the mean (SEM). Significantly different latencies from TAP found by two-sided Wilcoxon rank sum test with Holm–Bonferroni correction (*p < 0.05; N100 versus TAP p = 0.014; VAN versus TAP p = 0.038; N2 versus TAP p = 0.014; P3 versus TAP p = 0.040; all p values are Holm-Bonferroni corrected). A–C Data for report stimuli are from Report Paradigm (N = 57) and Report + No-Report Paradigm (N = 65); data for no-report stimuli are from Report + No-Report Paradigm (N = 65). D–F Data are from Report Paradigm in patient participants with thalamic depth electrodes (N = 7). Credit:自然通讯(2022)。DOI: 10.1038 / s41467 - 022 - 35117 - 4